Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice
Identifieur interne : 00DC17 ( Main/Repository ); précédent : 00DC16; suivant : 00DC18Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice
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Abstract
We describe a lattice of InAs nanowires that spontaneously organizes in three dimensions within an InAs/GaSb superlattice grown under high As4 flux. As characterized by x-ray diffraction and cross-sectional scanning tunneling microscopy, the periodic nanowires are ∼10 nm high, 120 nm wide, and many microns long along [110], with face-centered cubic-like vertical ordering within the superlattice. The unusual vertical ordering creates a lateral composition modulation with half the period of the nanowires. The structure appears to arise from the InAs misfit stress combined with specific InAs and GaSb growth kinetic effects. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice</title><author><name sortKey="Nosho, B Z" uniqKey="Nosho B">B. Z. Nosho</name><affiliation><inist:fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>SFA, Inc., Largo, Maryland 20774</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, Inc., Largo</wicri:cityArea></affiliation></author><author><name sortKey="Bennett, B R" uniqKey="Bennett B">B. R. Bennett</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Whitman, L J" uniqKey="Whitman L">L. J. Whitman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Washington</wicri:cityArea></affiliation></author><author><name sortKey="Goldenberg, M" uniqKey="Goldenberg M">M. Goldenberg</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Washington</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0574583</idno><date when="2002-12-02">2002-12-02</date><idno type="stanalyst">PASCAL 02-0574583 AIP</idno><idno type="RBID">Pascal:02-0574583</idno><idno type="wicri:Area/Main/Corpus">00E340</idno><idno type="wicri:Area/Main/Repository">00DC17</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>Nanostructured materials</term><term>STM</term><term>Semiconductor growth</term><term>Semiconductor superlattices</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865C</term><term>8107V</term><term>6837E</term><term>8115H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Superréseau semiconducteur</term><term>Nanomatériau</term><term>Diffraction RX</term><term>STM</term><term>Epitaxie jet moléculaire</term><term>Croissance semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We describe a lattice of InAs nanowires that spontaneously organizes in three dimensions within an InAs/GaSb superlattice grown under high As<sub>4</sub> flux. As characterized by x-ray diffraction and cross-sectional scanning tunneling microscopy, the periodic nanowires are ∼10 nm high, 120 nm wide, and many microns long along [110], with face-centered cubic-like vertical ordering within the superlattice. The unusual vertical ordering creates a lateral composition modulation with half the period of the nanowires. The structure appears to arise from the InAs misfit stress combined with specific InAs and GaSb growth kinetic effects. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice</s1></fA08><fA11 i1="01" i2="1"><s1>NOSHO (B. Z.)</s1></fA11><fA11 i1="02" i2="1"><s1>BENNETT (B. R.)</s1></fA11><fA11 i1="03" i2="1"><s1>WHITMAN (L. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>GOLDENBERG (M.)</s1></fA11><fA14 i1="01"><s1>Naval Research Laboratory, Washington, DC 20375</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>SFA, Inc., Largo, Maryland 20774</s1></fA14><fA20><s1>4452-4454</s1></fA20><fA21><s1>2002-12-02</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0574583</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We describe a lattice of InAs nanowires that spontaneously organizes in three dimensions within an InAs/GaSb superlattice grown under high As<sub>4</sub> flux. As characterized by x-ray diffraction and cross-sectional scanning tunneling microscopy, the periodic nanowires are ∼10 nm high, 120 nm wide, and many microns long along [110], with face-centered cubic-like vertical ordering within the superlattice. The unusual vertical ordering creates a lateral composition modulation with half the period of the nanowires. The structure appears to arise from the InAs misfit stress combined with specific InAs and GaSb growth kinetic effects. © 2002 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05Y</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A16C</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6865C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8107V</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6837E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8115H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Superréseau semiconducteur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor superlattices</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Nanomatériau</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Nanostructured materials</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>STM</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>STM</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fN21><s1>336</s1></fN21><fN47 i1="01" i2="1"><s0>0248M000421</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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